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BD4216NUV_11 Datasheet, PDF (1/5 Pages) Rohm – Silicon Monolithic Integrated Circuit
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S T R U C T U R E Silicon Monolithic Integrated Circuit
P R O D U C T S E R I E S Strobe Charge Control IC
T Y P E BD4216NUV
F u n c t i o n s 1. Built-in power transistor
2. Adjustable transformer primary-side peak current
3. Standby mode switching with the START pin
4. Includes charge complete signal output (FULL) pin.
Includes charge voltage detection (VC) pin (can be set externally).
5. Built-in thermal shutdown circuit (TSD)
6. Built-in IGBT driver
7. Thermally enhanced VSON010V3030 package. (3.0mm x 3.0mm, 1.0mm pitch)
○Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limit
Unit
VCC pin
VCC
-0.3 to 7
V
PVC pin
PVC
50
V
VC pin
VC
-10 to 36
V
START pin
START
-0.3 to 7
V
ADJ pin
ADJ
-0.3 to 7
V
FULL pin
FULL
-0.3 to 7
V
IGBT_IN pin
IGBT_IN
-0.3 to 7
V
Operating temperature
Topr
−35 to 85
°C
Storage temperature range
Tstg
−55 to 150
°C
Junction temperature
Tjmax
150
°C
Power dissipation
Pd
1270*1
mW
*1: Reduced by 10.16 mW/°C over Ta = 25°C. (When mounted on 74.2 mm  74.2 mm  1.6 mm, glass epoxy)
○Recommended operating ranges
Parameter
Symbol
Limit
Unit
VCC power supply input voltage range
VCC
2.5 to 5.5
V
START pin input voltage range
VSTART
0 to VCC
V
ADJ pin input voltage range
VADJ
0 to VCC
V
IGBT_IN pin input voltage range
VIGBT_IN
0 to VCC
V
FULL pin input voltage range
VFULL
0 to 5.5
V
◎This product is not designed for normal operation within a radioactive environment.
REV. A