BD3533HFN_09 Datasheet, PDF (1/5 Pages) Rohm – Silicon Monolithic Integrated Circuit

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STRUCTURE
TYPE
PRODUCT SERIES
FEATURES
Silicon Monolithic Integrated Circuit
Regulator IC for Memory termination
BD3533HFN
・Incorporates a push-pull power supply for termination (VTT)
・Incorporates a reference voltage circuit(VREF)
・Compatible with Dual Channel (DDR-Ⅱ)
○ ABSOLUTE MAXIMUM RATINGS (Ta=100℃)
Parameter
Input Voltage
Enable Input Voltage
Termination Input Voltage
VDDQ Reference Voltage
Symbol
VCC
VEN
VTT_IN
VDDQ
Limit
7 ^*1*2
7 ^*1*2
7 ^*1*2
7 ^*1*2
Unit
V
V
V
V
Output Current
Power Dissipation1
Power Dissipation2
Power Dissipation3
ITT
1
A
Pd1
630 *³
mW
Pd2
1350 *⁴
mW
Pd3
1750 *⁵
mW
Operating Temperature Range
Topr
-30～+100
℃
Storage Temperature Range
Tstg
-55～+150
℃
Maximum Junction Temperature
Tjmax
+150
℃
*1 Should not exceed Pd.
*2 Instantaneous surge voltage, back electromotive force and voltage under less than 10% duty cycle.
*3 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 0.2%) θja=198.4℃/Ｗ
*4 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 7%) θja=92.4℃/Ｗ
*5 With Ta≧25℃ when mounting a 70mm×70mm×1.6mm glass-epoxy substrate 1-layer board (copper foil density 65%) θja=71.4℃/Ｗ
○ RECOMMENDED OPERATING CONDITIONS (Ta=25℃)
PARAMETER
SYMBOL
Input Voltage
VCC
Termination Input Voltage
VTT_IN
VDDQ Reference Voltage
VDDQ
Enable Input Voltage
VEN
★ No radiation-resistant design is adopted for the present product.
MIN
MAX
UNIT
2.7
5.5
V
1.0
5.5
V
1.0
2.75
V
-0.3
5.5
V
The Japanese version of this document is the official specification.
This translated version is intended only as a reference, to aid in understanding the official version.
If there are any differences between the original and translated versions of this document, the official Japanese language version takes priority.
REV. E