BD3506F_10 Datasheet, PDF (1/15 Pages) Rohm – Nch FET Ultra LDO for PC Chipsets

High Performance Regulators for PCs
Nch FET Ultra LDO
for PC Chipsets
BD3506F,BD3506EFV
No.10030EAT30
Description
The BD3506F/EFV is an ultra-low dropout linear regulator for chipset that can achieve ultra-low voltage input to ultra-low
voltage output. By using N-MOS FET for built-in power transistor, the regulator can be used at ultra-low I/O voltage
difference up to voltage difference generated by ON resistor (Ron = 120 mΩ/100 mΩ). Because by reducing the I/O voltage
difference, large current (Iomax = 2.5A) output is achieved and conversion loss can be reduced, switching power supply can
be replaced. BD3506F/EFV does not need any choke coil, diode for rectification and power transistors which are required
for switching power supply, total cost of the set can be reduced and compact size can be achieved for the set. Using
external resistors, optional output from 0.65V to 2.5V can be set. In addition, since voltage output start-up time can be
adjusted by using the NRCS terminal, it is possible to meet the power supply sequence of the set.
Features
1) Built-in high-accuracy reference voltage circuit (0.65V±1%)
2) Built-in VCC low input maloperation prevention circuit (Vcc = 4.15V)
3) Reduced rush current by NRCS
4) Built-in ultra-low on-resistor (120/100 mΩ typ) Nch Power MOSFET (BD3506F/BD3506EFV)
5) Built-in current limiting circuit (2.5A min)
6) Built-in thermal shutdown circuit
7) Output variable type (0.65-2.5V)
8) Adoption of SOP8 package (BD3506F): 5.0 x 6.2 x 1.5 (mm)
9) Adoption of high power HTSSOP-B20 package (BD3506EFV): 5.0 x 6.4 x 1.0 (mm)
Applications
Mobile PC, desktop PC, LCD-TV, DVD, digital home appliances
●Line up
Parameter
Ron
Output Current
Package
BD3506F
120mΩ
2.5A
SOP8
BD3506EFV
100mΩ
2.5A
HTSSOP-B20
●Absolute Maximum Ratings(Ta=25℃)
Parameter
Input Voltage1
Input Voltage2
Symbol
VCC
VIN
Ratings
BD3506F
BD3506EFV
Unit
7 *¹
7 *¹
V
7 *¹
7 *¹
V
Enable Input Voltage
Power Dissipation1
Power Dissipation2
Ven
7
7
V
Pd1
560 *²
-
mW
Pd2
690 *³
1000 *⁴
mW
Operating Temperature Range
Topr
-10～+100
-10～+100
℃
Storage Temperature Range
Tstg
-55～+125
-55～+125
℃
Maximum Junction Temperature
Tjmax
+150
+150
℃
*1 However, not exceeding Pd.
*2 In the case of Ta≥25°C (no heat radiation board), derated at 4.48 mW/°C.
*3 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 5.52 mW/°C.
*4 In the case of Ta≥25°C (when mounting to 70mmx70mmx1.6mm glass epoxy substrate), derated at 8.00 mW/°C.
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2010.05 - Rev.A