BD3460FS_15 Datasheet, PDF (1/30 Pages) Rohm – General-Purpose 6ch Electronic Volume with Built-in Advanced Switch

Datasheet
General-Purpose 6ch Electronic Volume with
Built-in Advanced Switch
BD3460FS
General Description
BD3460FS is a 6ch electronic volume which has the
best audio efficiency in the industry. It has a ground
isolation amplifier when connecting with external voice
inputs such as portable audio and car navigation. Also,
BD3460FS has a volume switching shock sound
prevention technique called “Advanced Switch,”
supporting the construction of high quality car audio
space by simple control.
Features
■ Reduce switching noise of volume by using
Advanced Switch circuit.
■ Built-in buffered stereo ground isolation amplifier
inputs, ideal for external input.
■ Energy-saving design resulting in low-current
consumption by utilizing the Bi-CMOS process. It
has the advantage in quality over scaling down
the power heat control of the internal regulators.
■ Arranges all I/O terminals together for easier PCB
layout and smaller PCB area.
■ I²C BUS can be controlled by 3.3V / 5V.
Key Specifications
 Power Supply Voltage Range:
 Circuit Current (no signal):
 Total Harmonic Distortion:
 Maximum Input Voltage:
 Cross-talk Between Selectors:
 Volume Control Range:
 Output Noise Voltage:
 Residual Output Noise Voltage:
 Operating Temperature Range:
7.0V to 9.5V
25mA (Typ)
0.0004%(Typ)
2.35Vrms (Typ)
-105dB (Typ)
+23dB to -79dB
1.9µVrms(Typ)
1.6µVrms (Typ)
-40°C to +85°C
Package
W(Typ) x D(Typ) x H(Max)
Applications
It is optimal for car audio. It can also be used for car
navigation, audio equipment of mini Compo, micro
Compo, DVD, TV, etc.
SSOP-A24
10.00mm x 7.80mm x 2.10mm
Typical Application Circuit
FIL GND
10μ
SDA
SCL CS VCC OUTF1 OUTF2 OUTR1 OUTR2 OUTS1 OUTS2
10μ
0.1μ
4.7μ
4.7μ
4.7μ
4.7μ
4.7μ
4.7μ
2.2K
24
23
22
21
20
19
18
17
16
15
14
13
VCC
VCC/2 _GND
I²C BUS LOGIC
■6 ch Volume
++2233ddBB～to--7799dｄBB//11dBdB step,-∞
★： Advanced switch circuit
BUFFERED
GND ISO AMP
100k 100k 100k 100k 100k 100k 100k 100k 100k
BUFFERED
GND ISO AMP
100k 100k
1
2
3
4
5
6
7
8
9
10
11
12
1μ
1μ
1μ
1μ
1μ
1μ
10μ
10μ
4.7μ
4.7μ
10μ
10μ
INF1
INF2 INR1
INR2 INS1
INS2 PIN2
NIN2 DIFFOUT2 DIFFOUT1 NIN1 PIN1
Unit
R : [Ω]
C : [F]
○Product structure：Silicon monolithic integrated circuit
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
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TSZ02201-0C2C0E100350-1-2
16.Dec.2015 Rev.001