BD2270HFV_14 Datasheet, PDF (1/22 Pages) Rohm – Controller ICs for High Side NMOSFET

Datasheet
Controller ICs
for High Side NMOSFET
BD2270HFV
General Description
BD2270HFV is a gate driver for high side N-Channel
MOSFET that comes with a discharge circuit for the
output capacitive load. An internal charge pump
enables the IC to drive the gate of an external high
side NMOSFET without using any external parts. The
power up sequence is controlled by a comparator with
hysteresis function. The space saving HVSOF5
package is used.
Features
■ Built-in Charge Pump Circuit Drives the Gate of
the External N-Channel Power MOSFET
■ Built-in Discharge Circuit for Output Charge
■ Soft Start Circuit
■ Built-in Comparator with Hysteresis Function at
Control Block Input
■ Possible to drive N-channel power MOSFET
Applications
PCs
PC Peripheral Devices
Digital Consumer Electronics
Key Specifications
 Input Voltage Range:
 GATE Rise Time (CGATE= 500pF):
 GATE Output Voltage(VCC= 5V):
 Operating Current:
 Standby Current:
 Operating Temperature Range:
2.7V to 5.5V
130μs (Typ)
13.5V(Typ)
50μA(Typ)
5μA (Typ)
-25°C to +85°C
Package
W(Typ) D(Typ) H (Max)
HVSOF5
1.60mm x 1.60mm x 0.60mm
Typical Application Circuit
3.3V
V_{IN_SWITCH}
V_{OUT_SWITCH}
ON/OFF
VCC ^GATE DISC
AEN
GND
BD2270HFV
3.3V
Load
Lineup
GATE Output Voltage(VCC= 5V)
Min
Typ
Max
10V
13.5V
15V
Package
Orderable Part Number
HVSOF5
Reel of 3000
BD2270HFV-TR
BD2270HFV-GTR
○Product structure：Silicon monolithic integrated circuit
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111ï½¥14ï½¥001
○This product has not designed protection against radioactive rays
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TSZ02201-0E3E0H300230-1-2
21.Aug.2014 Rev.003