BD2270HFV-LB Datasheet, PDF (1/21 Pages) Rohm – Controller ICs for High Side NMOSFET

Datasheet
Controller ICs
for High Side NMOSFET
BD2270HFV-LB
General Description
This is the product guarantees long time support in
Industrial market.
BD2270HFV is an IC with a built-in external N-channel
MOSFET driver circuit. This IC has a built-in charge
pump circuit for gate drive and output discharge circuit,
enabling configuration of a high side load switch for
N-channel MOSFET drive without using any external
parts.
In addition, the control input terminal has a built-in
comparator with hysteresis function, facilitating control
of the power up sequence. The space saving type of
HVSOF5 package is used.
Features
■ Long time support a product for Industrial
applications.
■ Built-in charge pump
■ Built-in discharge circuit for output charge
■ Soft start circuit
■ Built-in comparator with hysteresis function at
control input terminal
■ Possible to drive N-channel power MOSFET
Applications
Industrial Equipment, PCs, PC peripheral devices,
digital consumer electronics, etc.
Key Specifications
„ Input voltage range:
„ GATE rise time (C_GATE=500pF) :
„ GATE output voltage(V_CC=5V):
„ Operating current:
„ Standby current:
„ Operating temperature range:
2.7V to 5.5V
130μs (Typ.)
13.5V(Typ.)
50μA(Typ.)
5μA (Typ.)
-25℃ to +85℃
Package
HVSOF5
W(Typ.) D(Typ.) H (Max.)
1.60mm x 1.60mm x 0.60mm
HVSOF5
Typical Application Circuit
3.3V
V_{IN_SWITCH}
V_{OUT_SWITCH}
3.3V
Load
VCC ^GATE DISC
ON/OFF
AEN
GND
BD2270HFV
Lineup
GATE output voltage(V_CC=5V)
Min.
Typ.
Max.
10V
13.5V
15V
Package
Orderable Part Number
HVSOF5 Reel of 3000 BD2270HFV – LBTR
○Product structure：Silicon monolithic integrated circuit
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111ï½¥14ï½¥001
○This product has no designed protection against radioactive rays
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TSZ02201-0E3E0H300410-1-2
21.Feb.2014 Rev.002