BCX71H Datasheet, PDF (1/2 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR

Transistors
PNP small signal transistor
BCX71H
BCX71H
zFeatures
1) Ideal for switching and AF amplifier applications.
2) Complements the BCX70.
zDimensions (Unit : mm)
BCX71H
zPackaging specifications
Type
BCX71H
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Limits
−45
−45
−5
−0.2
0.2
0.35
150
−55 to 150
(1)Emitter
(2)Base
(3)Collector
2.9
0.4
(3)
0.95
0.45
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : GBH
Unit
V
V
V
A
W
W_∗
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector-emitter cutoff current
ICES
Emitter-base cutoff current
IEBO
VCE(sat)1
Collector-emitter saturation voltage
VCE(sat)2
Base-emitter saturation voltage
VBE(sat)1
VBE(sat)2
Base-emitter voltage
VBE(on)
DC current transfer ratio
hFE
Transition frequency
fT
Collector output capacitance
Cob
Noise figure
NF
Collector-base cutoff current
ICBO
Min.
−45
−5
−
−
−
−
−
−
−0.6
140
80
−
−
−
−
Typ. Max. Unit
−
−
V
−
−
V
− −0.1 µA
− −0.1 µA
− −0.25 V
− −0.55 V
− −0.85 V
− −1.05 V
− −0.75 V
−
310
−
−
−
180
− MHz
−
6
pF
−
6
dB
−
−20 µA
Conditions
IC= −2mA
IC= −10µA
VCE= −45V
VEB= −4V
IC/IB= −10mA/ −0.25mA
IC/IB= −50mA/ −1.25mA
IC/IB= −10mA/ −0.25mA
IC/IB= −50mA/ −1.25mA
VCE= −5V, IC= −2mA
VCE= −5V, IC= −2mA
VCE= −5V, IC= −50mA
VCE= −5V, IE= −10mA, f=100MHz
VCB= −10V, f=1MHz
VCE= −5V, IC= −200µA, f=1kHz,Rg=2kΩ
VCB= −45V, Ta=150°C
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