BCX70J Datasheet, PDF (1/3 Pages) Samsung semiconductor – NPN EPITAXIAL SILICON TRANSISTOR

NPN small signal transistor
BCX70J, K
Features
1) Ideal for switching and AF amplifier applications.
2) Complements the BCX71.
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
BCX70J, K
Taping
T116
3000
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
Emitter-base voltage
Collector current
VEBO
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
Limits
45
45
5
0.2
0.2
0.35
150
−55 to 150
Dimensions (Unit : mm)
BCX70J,K
(1)Emitter
(2)Base
(3)Collector
2.9
0.4
(3)
0.95
0.45
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : GAJ (BCX70J)
GAK (BCX70K)
Unit
V
V
V
A
W
W_∗
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
BVEBO
Collector-emitter cutoff current
ICES
Emitter-base cutoff current
IEBO
VCE(sat)1
Collector-emitter saturation voltage
VCE(sat)2
Base-emitter saturation voltage
VBE(sat)1
VBE(sat)2
Base-emitter voltage
VBE(on)
hFE1
DC current transfer ratio
hFE2
Transition frequency
fT
Collector output capacitance
Cob
Noise figure
NF
Collector-base cutoff current
ICBO
Min.
45
5
−
−
−
−
−
−
0.55
250
90
125
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
0.1
0.1
0.35
0.55
0.85
1.05
0.75
630
−
−
4.5
6
20
Unit
V
V
μA
μA
V
V
V
V
V
−
MHz
pF
dB
μA
Conditions
IC= 2mA
IC= 10μA
VCE= 45V
VEB= 4V
IC/IB= 10mA/ 0.25mA
IC/IB= 50mA/ 1.25mA
IC/IB= 10mA/ 0.25mA
IC/IB= 50mA/ 1.25mA
VCE= 5V, IC= 2mA
VCE= 5V, IC= 2mA
VCE= 5V, IC= 50mA
VCE= 5V, IE= 10mA, f=100MHz
VCB= 10V, f=1MHz, IE=0A
VCE= 5V, IC= 200μA, f=1kHz,Rg=2kΩ
VCB= 45V, Ta=150°C
This parts are classified into the categories below and given hFE item.
Part. No BCX70J BCX70K
hFE1 250 to 460 380 to 630
hFE2 90 or more 125 or more
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2011.11 - Rev.B