BCX19_11 Datasheet, PDF (1/3 Pages) Rohm – NPN small signal transistor

NPN small signal transistor
BCX19
Features
(1) High gain and low saturation voltage.
(2) Complements the BCX17.
Packaging specifications
Type
BCX19
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
Dimensions (Unit : mm)
BCX19
2.9
0.4
(3)
0.95
0.45
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : GU1
Absolute maximum ratings (Ta=25C)
Parameter
Collector-emitter voltage (VBE=0)
Collector-emitter voltage (open base)
Emitter-base voltage
Collector current
Collector current (peak value)
Symbol
VCES
VCEO
VEBO
IC
ICM
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
∗² Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE
Limits
50
45
5
0.5
1
0.2
0.35
0.425
150
−65 to 150
Unit
V
V
V
A
A
W
W∗
W ∗2
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCES 50
Collector-emitter breakdown voltage BVCEO 45
Emitter-base breakdown voltage
BVEBO
5
Collector-base cutoff current
ICBO
−
Emitter-base cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
Base-emitter voltage
VBE(on)
−
100
DC current transfer ratio
hFE
70
40
Transition frequency
fT
−
Collector-base cutoff current
ICBO
−
Typ.
−
−
−
−
−
−
−
−
−
−
250
−
Max.
−
−
−
0.1
10
0.62
1.2
600
−
−
−
5
Unit
V
V
V
μA
μA
V
V
−
MHz
μA
Conditions
IC= 50μA
IC= 10mA
IE= 50μA
VCB= 20V
VEB= 5V
IC/IB= 500mA/ 50mA
VCE= 1V, IC= 500mA
VCE= 1V, IC= 100mA
VCE= 1V, IC= 300mA
VCE= 1V, IC= 500mA
VCE= 5V, IE= 20mA, f=100MHz
VCB= 20V, Ta=150°C
www.rohm.com
○^c 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.09 - Rev.B