BCX17_11 Datasheet, PDF (1/3 Pages) Rohm – PNP small signal transistor

PNP small signal transistor
BCX17
Small load switch transistor with high gain and Low saturation voltage.
Features
(1) High gain and low saturation voltage.
(2) Ideal for small load switching applications.
Complements the BCX19
Packaging specifications
Type
BCX17
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
Dimensions (Unit : mm)
SST3
(1)Emitter
(2)Base
(3)Collector
2.9
0.4
(3)
0.95
0.45
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : GT1
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-emitter voltage (VBE=0)
Collector-emitter voltage (open base)
Emitter-base voltage
Collector current
Collector current (peak value)
VCES
VCEO
VEBO
IC
ICM
−50
−45
−5
−0.5
−1
Collector power dissipation
Junction temperature
0.2
PC
0.35
0.425
Tj
150
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
∗² Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE
−65 to 150
Unit
V
V
V
A
A
W
W
∗
W
∗2
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCES −50
Collector-emitter breakdown voltage BVCEO −45
Emitter-base breakdown voltage
BVEBO
−5
Collector-base cutoff current
ICBO
−
Emitter-base cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
Base-emitter voltage
VBE(on)
−
100
DC current transfer ratio
hFE
70
40
Transition frequency
fT
−
Collector-base cutoff current
ICBO
−
Typ. Max. Unit
−
−
V
−
−
V
−
−
V
− −0.1 μA
−
−10 μA
− −0.62 V
− −1.2 V
−
600
−
−
−
−
−
200
− MHz
−
−5 μA
Conditions
IC= −50μA
IC= −10mA
IE= −50μA
VCB= −20V
VEB= −5V
IC/IB= −500mA/ −50mA
VCE/IC= −1V/ −500mA
VCE= −1V, IC= −100mA
VCE= −1V, IC= −300mA
VCE= −1V, IC= −500mA
VCE= −5V, IE= −20mA, f=100MHz
VCB= −20V, Ta=150°C
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2011.09 - Rev.B