BCX17 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistors

Transistors
PNP small signal transistor
BCX17
BCX17
Small load switch transistor with high gain and Low saturation voltage.
zFeatures
1) High gain and low saturation voltage.
2) Ideal for small load switching applications.
3) Complements the BCX19.
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
BCX17
Taping
T116
3000
zDimensions (Unit : mm)
SST3
(1)Emitter
(2)Base
(3)Collector
2.9
0.4
(3)
0.95
0.45
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : GT1
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-emitter voltage (VBE=0)
Collector-emitter voltage (open base)
Emitter-base voltage
Collector current
Collector current (peak value)
Symbol
VCES
VCEO
VEBO
IC
ICM
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗ Mounted on a 7×5×0.6 mm CERAMIC SUBSTRATE
∗² Mounted on a 15×15×0.6 mm CERAMIC SUBSTRATE
Limits
−50
−45
−5
−0.5
−1
0.2
0.35
0.425
150
−65 to 150
Unit
V
V
V
A
A
W
W
∗
W
∗2
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCES −50
Collector-emitter breakdown voltage BVCEO −45
Emitter-base breakdown voltage
BVEBO −5
Collector-base cutoff current
ICBO
−
Emitter-base cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
Base-emitter voltage
VBE(on)
−
100
DC current transfer ratio
Transition frequency
Collector-base cutoff current
hFE
70
40
fT
−
ICBO
−
Typ.
−
−
−
−
−
−
−
−
−
−
200
−
Max.
−
−
−
−0.1
−10
−0.62
−1.2
600
−
−
−
−5
Unit
V
V
V
µA
µA
V
V
−
MHz
µA
Conditions
IC= −50µA
IC= −10mA
IE= −50µA
VCB= −20V
VEB= −5V
IC/IB= −500mA/ −50mA
VCE/IC= −1V/ −500mA
VCE= −1V, IC= −100mA
VCE= −1V, IC= −300mA
VCE= −1V, IC= −500mA
VCE= −5V, IE= −20mA, f=100MHz
VCB= −20V, Ta=150°C
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