BC848BW Datasheet, PDF (1/6 Pages) Rohm – NPN General Purpose Transistor

Transistors
BC848BW / BC848B
NPN General Purpose Transistor
BC848BW / BC848B
zFeatures
1) BVCEO minimum is 30V (IC=1mA)
2) Complements the BC858B / BC858BW.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Collector power ^BC848BW
dissipation
PC
BC848B
Junction temperature
Tj
Storage temperature
Tstg
∗ When mounted on a 7×5×0.6mm ceramic board.
Limits
30
30
5
0.1
0.2
0.2
0.35
150
−65~+150
Unit
V
V
V
A
W
W
W^∗
°C
°C
zExternal dimensions (Unit : mm)
BC848BW
ROHM : UMT3
EIAJ : SC-70
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
(3)
0.3
+0.1
−0
0.15±0.05
All terminals have same dimensions
0~0.1
(1) Emitter
(2) Base
(3) Collector
BC848B, BC848C
ROHM : SST3
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
−0.1
0.45±0.1
(1)
(2)
(3)
0~0.1
0.2Min.
0.4
+0.1
−0.05
0.15_{−+00..016}
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Collector output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
VCE(sat)
VBE(on)
hFE
fT
Cob
Cib
Min.
30
30
5
−
−
−
−
0.58
200
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
200
3
8
Max. Unit
Conditions
−
V IC=50µA
−
V IC=1mA
−
V IE=50µA
100 nA VCB=30V
5 µA VCB=30V, Ta=150°C
0.25
IC/IB=10mA/0.5mA
V
0.6
IC/IB=100mA/5mA
0.77 V VCE/IC=5V/10mA
450 − VCE/IC=5V/2mA
− MHz VCE=5V, IE=−20mA, f=100MHz
− pF VCB=10V, IE=0, f=1MHz
− pF VEB=0.5V, IE=0, f=1MHz
(SPEC-C22)
Rev.A
1/5