BAS21HM Datasheet, PDF (1/7 Pages) Rohm – Switching Diode

Switching Diode
BAS21HM
Series
High frequency switching
Dimensions (Unit : mm)
Datasheet
Land Size Figure (Unit : mm)
2.40
Application
General rectification
Features
1) Small power mold type
(SOT-23)
2) High speed switching
3) High current overload capacity
ROHM : SSD3 JEDEC : SOT-23
Taping Dimensions (Unit : mm)
SOT-23
Structure
0.80MIN
Cathode
Anode Open
Construction
Silicon epitaxial planar type
Absolute Maximum Ratings (T_a= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
V_RM
Duty≦0.5
250
V
Reverse voltage
V_R
Direct reverse voltage
200
V
Forward current
I_F
Direct forward current
200
mA
Repetitive peak forward current
I_FRM
tp ≦1s, Duty≦0.5
625
mA
Non-repetitive forward surge current
I_FSM
Square wave ,
Non-repetitive at T_j=25ºC
t=1μs
t=10ms
10
2
A
Power dissipation
P_tot
Glass epoxy mounted *
250
mW
Operating junction temperature
T_j
-
150
°C
Storage temperature
T_stg
-
55 to 150 °C
* 20mm x 20mm x 0.8mm, FR-4 both side is all covered with copper.
Electrical Characteristics (T_j= 25°C)
Parameter
Symbol
Conditions
Min.
Forward voltage
V_F
I_F=100mA
I_F=200mA
0.75
0.8
Reverse current
I_R
V_R=200V
T_j=25ºC _-
T_j=150ºC _-
Reverse recovery time
Terminal capacitance
t_rr
I_F=30mA, I_R=30mA, R_L=100Ω, I_rr=0.1×I_{R -}
C_t
V_R=0V, f=1MHz
-
Thermal resistance
R_th(j-a)
Junction to ambient
-
Typ.
0.93
1.05
-
-
-
2.5
-
Max. Unit
1.0 V
1.25 V
100 nA
100 A
50 ns
- pF
250 °C/W
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2016.09 - Rev.A