2SK3065 Datasheet, PDF (1/4 Pages) Rohm – Small switching (60V, 2A)

Transistors
Small switching (60V, 2A)
2SK3065
2SK3065
!Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
!Structure
Silicon N-channel
MOS FET transistor
!External dimensions (Units : mm)
4.5^{+−00..21}
1.6±0.1
1.5±0.1
ROHM : MPT3
E I A J : SC-62
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
Abbreviated symbol : KE
0.4_{−+00..015}
(1) Gate
(2) Drain
(3) Source
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
2
A
Drain current
Pulsed
IDP^∗1
8
A
Reverse drain
Continuous
IDR
2
A
current
Pulsed
IDRP^∗1
8
A
Total power dissipation(Tc=25°C)
PD
0.5
2^∗2
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55∼+150
°C
∗1 Pw ≤ 10µs, Duty cycle ≤ 1%
∗2 When mounted on a 40 × 40 × 0.7 mm alumina board.
!Internal equivalent circuit
Drain
Gate
∗Gate
Protection
Diode
Source
∗ A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
∗ Pw ≤ 300µs, Duty cycle ≤ 1%
Symbol
IGSS
V(BR)DSS
IDSS
VGS(th)
RDS(on)
RDS(on)
Yfs∗
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Min.
−
60
−
0.8
−
−
1.5
−
−
−
−
−
−
−
Typ.
−
−
−
−
0.25
0.35
−
160
85
25
20
50
120
70
Max.
±10
−
10
1.5
0.32
0.45
−
−
−
−
−
−
−
−
Unit
Test Conditions
µA VGS = ±20V, VDS = 0V
V ID = 1mA, VGS = 0V
µA VDS = 60V, VGS = 0V
V VDS = 10V, ID = 1mA
Ω ID = 1A, VGS = 4V
Ω ID = 1A, VGS = 2.5V
S ID = 1A, VDS = 10V
pF VDS = 10V
pF VGS = 0V
pF f = 1MHz
ns ID = 1A, VDD 30V
ns VGS = 4V
ns RL = 30Ω
ns RG = 10Ω