2SK3050_1 Datasheet, PDF (1/6 Pages) Rohm – 10V Drive Nch MOS FET

Transistors
10V Drive Nch MOS FET
2SK3050
2SK3050
zStructure
Silicon N-channel MOSFET
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (VGSS)
guaranteed to be ±30V.
5) Drive circuits can be simple.
6) Parallel use is easy.
zExternal dimensions (Unit : mm)
CPT3
6.5
5.1
2.3
0.5
(1)Gate
(2)Drain
(3)Source
0.75
0.65
0.9 2.3
(1)
(2)
(3) 2.3
0.5
1.0
Abbreviated symbol : K3050
zApplications
Switching
zPackaging specifications
Package
Code
Type Basic ordering unit (pieces)
2SK3050
Taping
TL
2500
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Drain-source voltage
VDSS
600
Gate-source voltage
VGSS
±30
Drain current
Continuous
ID
2
Pulsed
IDP ^∗1
6
Reverse drain
current
Continuous
IDR
2
Pulsed
IDRP ^∗1
6
Source current
(Body Diode)
Continuous
IS
2
Pulsed
ISP ^∗1
6
Avalanche Current
IAS ^∗2
2
Avalanche Energy
EAS ^∗2
21
Total power dissipation (Tc=25°C)
PD
20
Channel temperature
Tch
150
Storage temperature
Tstg
∗1 Pw≤10µs, Duty cycle≤1%
∗2 L 10mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C
−55 to +150
zThermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
zInner circuit
Drain
Gate
∗1
Unit
V
Source
V
∗1 BODY DIODE
A
A
A
A
A
A
A
mJ
W
°C
°C
Limits
6.25
Unit
°C/W
Rev.A
1/5