2SK3019_1 Datasheet, PDF (1/4 Pages) Rohm – 2.5V Drive Nch MOS FET

Transistor
2.5V Drive Nch MOS FET
2SK3019
2SK3019
zStructure
Silicon N-channel
MOSFET
zApplications
Interfacing, switching (30V, 100mA)
zFeatures
1) Low on-resistance.
2) Fast switching speed.
3) Low voltage drive (2.5V) makes this device ideal for
portable equipment.
4) Drive circuits can be simple.
5) Parallel use is easy.
zExternal dimensions (Unit : mm)
EMT3
1.6
0.7
0.3
0.55
(3)
(1)Source
(2)Gate
(3)Drain
(2) (1)
0.2
0.2
0.15
0.5 0.5
1.0
Abbreviated symbol : KN
zPackaging specifications
Package
Type
Code
Basic ordering unit
(pieces)
2SK3019
Taping
TL
3000
zEquivalent circuit
Drain
Gate
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
V
Continuous
ID
±100
mA
Drain current
Pulsed
IDP^∗1
±400
mA
Total power dissipation
PD^∗2
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Pw≤10µs, Duty cycle≤50%
∗2 With each pin mounted on the recommended lands.
∗ Gate
Protection
Diode
Source
∗A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in use.
Use a protection circuit when the fixed voltages
are exceeded.
zThermal resistance
Parameter
Channel to ambient
∗ With each pin mounted on the recommended lands.
Symbol
Rth(ch-a) ^∗
Limits
833
Unit
°C / W
Rev.B
1/3