2SK3019EB Datasheet, PDF (1/6 Pages) Rohm – 2.5V Drive Nch MOSFET

2.5V Drive Nch MOSFET
2SK3019EB
 Structure
Silicon N-channel MOSFET
Features
1) High-speed switching.
2) Low voltage drive(2.5V drive).
3) Drive circuits can be simple.
4) Parallel use is easy.
Data Sheet
 Dimensions (Unit : mm)
EMT3F
(3)
(1)
(2)
Abbreviated symbol : KN
 Application
Switching
 Packaging specifications
Package
Type _Code
Basic ordering unit (pieces)
2SK3019EB
Taping
TCL
3000

 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Power dissipation
Channel temperature
Range of storage temperature
V_DSS
30
V
V_GSS
20
V
I_D
100
mA
I_DP ^*1
400
mA
P_D ^*2
150
mW
Tch
150
C
Tstg 55 to 150 C
*1 Pw10s, Duty cycle1%
*2 Each terminal mounted on a reference land.
 Inner circuit
(3)
(1) Gate
(2) Source
(3) Drain
(1)
∗2
∗1
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
 Thermal resistance
Parameter
Channel to Ambient
* Each terminal mounted on a reference land.
Symbol
Rth (ch-a)^*
Limits
833
Unit
C / W
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2011.10 - Rev.A