2SD2704K_12 Datasheet, PDF (1/4 Pages) Rohm – For Muting

For Muting (20V, 0.3A)
2SD2704K
Features
1) High DC current gain.
hFE = 820 to 2700
2) High emitter-base voltage.
VEBO = 25V (Min.)
3) Low Ron
Ron= 0.7 (Typ.)
Structure
Epitaxial planar type
NPN silicon transistor
Packaging specifications
Package
Taping
Code
T146
Type
Basic ordering 3000
unit (pieces)
2SD2704K
Dimensions (Unit : mm)
2SD2704K
2.9
1.1
0.4
0.8
(3)
ROHM : SMT3
EIAJ : SC-59
(2)
(1)
0.95 0.95
0.15
1.9
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
Abbreviated symbol : XL
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
0.3
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO 50
Collector-emitter breakdown voltage BVCEO 20
Emitter-base breakdown voltage
BVEBO 25
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage
VCE(sat)
−
DC current transfer ratio
Transition frequency
Output capacitance
hFE
820
fT^∗
−
Cob
−
Output On-resistance
∗ Measured using pulse current
Ron
−
Typ.
−
−
−
−
−
50
−
35
3.9
0.7
Max.
−
−
−
0.1
0.1
100
2700
−
−
−
Unit
V
V
V
μA
μA
mV
−
MHz
pF
Ω
Conditions
IC=10μA
IC=1mA
IE=10μA
VCB=50V
VEB=25V
IC/IB=30mA/3mA
VCE=2V, IC=4mA
VCE=6V, IE= −4mA, f=10MHz
VCB=10V, IE=0A, f=1MHz
IB=5mA, Vi=100mV(rms), f=1kHz
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2012.01 - Rev.C