2SD2696_09 Datasheet, PDF (1/4 Pages) Rohm – Low frequency transistor (for amplification)

Low frequency transistor (for amplification)
2SD2696
zStructure
NPN Silicon Epitaxial Planar Transistor
zFeatures
1) The transistor of 400mA class which went only with 2012
size conventionally is attained in 1208 size.
2) Collector saturation voltage is low.
VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA
zApplications
Switching
zDimensions (Unit : mm)
VMT3
(1) Base
(2) Emitter
(3) Collector
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
Abbreviated symbol : UH
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
2SD2696
Taping
T2L
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
Power dissipation
IC
ICP ^∗1
PD ^∗2
Junction temperature
Tj
Range of storage temperature
Tstg
∗1 Pw=10ms, Single pulse
∗2 Each terminal mounted on a recommended land.
Limits
30
30
6
400
800
150
150
−55 to +150
Unit
V
V
V
mA
mA
mW / TOTAL
°C
°C
zInner circuit
(3) Collector
(1) Base
(2) Emitter
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-emitter breakdown voltage BVCEO 30 −
−
V IC=1mA
Collector-base breakdown voltage BVCBO 30 −
−
V IC=10µA
Emitter-base breakdown voltage
BVEBO
6
−
−
V IE=10µA
Collector cut-off current
ICBO
−
− 100 nA VCB= 30V
Emitter cut-off current
IEBO
−
− 100 nA VEB= 6V
Collector-emitter saturation voltage VCE (sat) − 120 300 mV IC=100mA, IB= 2mA
DC current gain
hFE 270 − 680 − VCE=2V, IC=100mA
Transition frequency
fT
− 400 − MHz VCE=2V, IE= −100mA, f=100MHz
Output capacitance
Cob
− 3.0 − pF VCB=10V, IE= 0A, f=1MHz
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2009.05 - Rev.B