2SD2696 Datasheet, PDF (1/2 Pages) Rohm – Low frequency transistor (for amplification)

Transistors
2SD2696
Low frequency transistor (for amplification)
2SD2696
zStructure
NPN Silicon Epitaxial Planar Transistor
zExternal dimensions (Unit : mm)
VMT3
zFeatures
1) The transistor of 400mA class which went only with 2012
size conventionally is attained in 1208 size.
2) Collector saturation voltage is low.
VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA
zApplications
Switching
(1) Base
(2) Emitter
(3) Collector
1.2
0.32
(3)
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
Abbreviated symbol : UH
zPackaging specifications
Type
2SD2696
Package
Code
Basic ordering unit (pieces)
Taping
T2L
8000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
Power dissipation
IC
ICP ^∗1
PD ^∗2
Junction temperature
Tj
Range of storage temperature
Tstg
∗1 Pw=10ms, Single pulse
∗2 Each terminal mounted on a recommended land.
Limits
30
30
6
400
800
150
150
−55 to +150
Unit
V
V
V
mA
mA
mW / TOTAL
°C
°C
zInner circuit
(3) Collector
(1) Base
(2) Emitter
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCEO 30
Collector-base breakdown voltage BVCBO 30
Emitter-base breakdown voltage
BVEBO
6
Collector cut-off current
ICBO
−
Emitter cut-off current
IEBO
−
Collector-emitter saturation voltage VCE (sat) −
DC current gain
hFE 270
Transition frequency
fT
−
Output capacitance
Cob
−
Typ.
−
−
−
−
−
120
−
400
3.0
Max.
−
−
−
100
100
300
680
−
−
Unit
V
V
V
nA
nA
mV
−
MHz
pF
Conditions
IC=1mA
IC=10µA
IE=10µA
VCB= 30V
VEB= 6V
IC=100mA, IB= 2mA
VCE=2V, IC=100mA
VCE=2V, IE= −100mA, f=100MHz
VCB=10V, IE= 0A, f=1MHz
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