2SD2679 Datasheet, PDF (1/3 Pages) Rohm – 2A / 30V Bipolar transistor

Transistors
2A / 30V Bipolar transistor
2SD2679
2SD2679
zApplications
Low frequency amplification, driver
zFeatures
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(VCE(sat) ≤ 350mV at IC = 1.5A, IB = 75mA)
zStructure
NPN epitaxial planar silicon transistor
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)Base
(2)Collector
(3)Emitter
(1)
(2)
(3)
0.4
0.4
0.5
0.4
1.5 1.5
3.0
Abbreviated symbol : XZ
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
Collector current
DC
Pulse
VEBO
IC
ICP
6
V
2
A
4 ∗1
Power dissipation
0.5 ∗2
PC
W
2 ∗3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗1 Pw=1ms, single pulse.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.
zPackaging specifications
Package
MPT3
Packaging type
Taping
Code
T100
Part No.
Basic ordering unit (pieces) 1000
2SD2679
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat) ∗
hFE
fT
Cob
Min.
30
30
6
−
−
−
270
−
−
Typ. Max. Unit
Conditions
−−
IC=1mA
− − V IC=10µA
−−
IE=10µA
− 100 _nA VCB=30V
− 100
VEB=6V
180 370 mV IC/IB=1.5A/75mA
− 680 − VCE=2V, IC=200mA
280 − MHz VCE=2V, IE= −200mA , f=100MHz
20 − pF VCB=10V , IE=0mA , f=1MHz
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