2SD2678 Datasheet, PDF (1/3 Pages) Rohm – 3A / 12V Bipolar transistor

Transistors
3A / 12V Bipolar transistor
2SD2678
2SD2678
zApplications
Low frequency amplification, driver
zFeatures
1) Collector current is high.
2) Low collector-emitter saturation voltage.
(VCE(sat) ≤ 250mV at IC = 1.5A, IB = 30mA)
zStructure
NPN epitaxial planar silicon transistor
zExternal dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)Base
(2)Collector
(3)Emitter
(1)
(2)
(3)
0.4
0.4
0.5
0.4
1.5 1.5
3.0
Abbreviated symbol : XX
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
6
V
DC
IC
Collector current
Pulse
ICP
3
A
6 ∗1
Power dissipation
0.5 ∗2
PC
W
2 ∗3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗1 Pw=1ms, Pulsed.
∗2 Each terminal mounted on a recommended land.
∗3 Mounted on a 40×40×0.7mm ceramic board.
zPackaging specifications
Package
MPT3
Packaging type
Taping
Code
T100
Part No.
Basic ordering unit (pieces) 1000
2SD2678
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulsed
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE ∗
fT ∗
Cob
Min. Typ. Max. Unit
Conditions
12 − −
IC=1mA
15 − − V IC=10µA
6−−
IE=10µA
−
− 100 _nA VCB=15V
− − 100
VEB=6V
− 120 250 mV IC/IB=1.5A/30mA
270 − 680 − VCE=2V, IC=500mA
− 360 − MHz VCE=2V, IE= −500mA , f=100MHz
− 20 − pF VCB=10V , IE=0mA , f=1MHz
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