2SD2670 Datasheet, PDF (1/3 Pages) Rohm – Low frequency amplifier

Transistors
Low frequency amplifier
2SD2670
zApplication
Low frequency amplifier
Driver
zFeatures
1) A collector current is large.
2) V_CE(sat) ≦ 250mV
At lc=1.5A / l_B=30mA
zExternal dimensions (Unit : mm)
Each lead has same dimensions
0.4
1.0MAX
0.85
0.7
(3)
(1)
(2)
0~0.1
0.95 0.95
1.9
2.9
0.16
ROHM : TSMT3 Abbreviated symbol : XX
2SD2670
(1) Base
(2) Emitter
(3) Collector
2SD2670
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power siddipation
PC
Junction temperature
Tj
Range of storage temperature Tstg
∗1 Single pulse, Pw=1ms
∗2 Mounted on a 25×25× ^t 0.8mm Ceramic substrate
Limits
15
12
6
3
6
500
1 ^∗2
150
−55 to +150
Unit
V
V
V
A
A^∗1
mW
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗ Pulse
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
15
−
−
V IC=10µA
12
−
−
V IC=1mA
6
−
−
V IE=10µA
−
−
100
nA VCB=15V
−
−
100
nA VEB=6V
−
120 250 mV IC=1.5A, IB=30mA
270
−
680
− VCE=2V, IC=500mA ^∗
−
360
−
MHz VCE=2V, IE=−500mA, f=100MHz ^∗
−
30
−
pF VCB=10V, IE=0A, f=1MHz
Rev.A
1/2