2SD2607 Datasheet, PDF (1/1 Pages) Rohm – For Power amplification (100V, 8A)

Transistors
Power Transistor (100V, 8A)
2SD2607
2SD2607
!Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1668.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
* ^{Single pulse, Pw = 10ms}
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
100
7
8
10
2
30
150
−55~+150
Unit
V
V
V
A (DC)
* ^{A (Pulse)}
W
W (Tc = 25°C)
°C
°C
!External dimensions (Units: mm)
10.0
φ 3.2
4.5
2.8
1.2
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SD2607
TO-220FN
1k~20k
-
500
!Circuit diagram
B
C
R1
R1 5kΩ
R2 300kΩ
R2
E
B : Base
C : Collector
E : Emitter
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
100
-
Collector-emitter breakdown voltage BVCEO
100
-
-
V
IC = 50µA
-
V IC = 5mA
Collector cutoff current
ICBO
-
-
10
µA VCB = 100V
Emitter cutoff current
IEBO
-
-
3
mA VEB = 5V
Collector-emitter saturation voltage
VCE(sat)
-
-
1.5
V
IC/IB = 3A/6mA
*¹
DC current transfer ratio
hFE
1000
-
20000
-
VCE/IC = 3V/2A
*¹
Transition frequency
fT
-
40
-
MHz VCE = 5V , IE = −0.2A , f = 10MHz
*²
Output capacitance
Cob
-
50
-
pF VCB = 10V , IE = 0A , f = 1MHz
*^{1 Measured using pulse current.}
*^{2 Transition frequency of the device.}