2SD2568 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (400V, 0.5A)

Transistors
Power Transistor (400V, 0.5A)
2SD2568
2SD2568
zFeatures
1) High breakdown voltage.(BVCEO=400V)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
400
400
7
0.5
10
150
−55 to +150
Unit
V
V
V
A
W(Tc=25°C)
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SD2568
CPT3
PQ
TL
2500
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
Typ. Max.
Unit
Conditions
400
−
−
V
IC=50µA
400
−
−
V
IC=1mA
7
−
−
V
IE=50µA
−
−
10
µA VCB=400V
−
−
10
µA VEB=6V
−
−
0.5
V
IC=100mA , IB=10mA
−
−
1.0
V
IC=100mA , IB=10mA
82
−
270
−
VCE/IC=5V/50mA
−
13.5
−
MHz VCE=5V , IE=−50mA , f=10MHz
−
8
−
pF VCB=10V , IE=0A , f=1MHz
Rev.A
1/2