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2SD2537_1 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (25V, 1.2A) | |||
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Transistors
2SD2537
Medium Power Transistor (25V, 1.2A)
2SD2537
zFeatures
1) High DC current gain.
2) High emitter-base voltage. (VEBO=12V)
3) Low saturation voltage.
(Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)
zDimensions (Unit : mm)
2SD2537
4.5
1.6
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
12
V
Collector current
1.2
A (DC)
IC
2
A (Pulse) â1
Collector power dissipation
0.5
W
PC
2
W â2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
â55 to +150
°C
â1 Single pulse Pw=100ms â2 When mounted on a 40Ã40Ã0.7mm ceramic board.
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
0.4
0.5
0.4
1.5 1.5
3.0
1.5
0.4
(1) Base
(2) Collector
(3) Emitter
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SD2537
MPT3
V
DV
T100
1000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
âMeasured using pulse current.
Symbol Min. Typ. Max. Unit
Conditions
BVCBO
30
â
â
V IC=10µA
BVCEO
25
â
â
V IC=1mA
BVEBO
12
â
â
V IE=10µA
ICBO
â
â
0.3 µA VCB=30V
IEBO
â
â
0.3 µA VEB=12V
VCE(sat)
â
â
0.3
V IC/IB=500mA/10mA
â
VBE(sat)
â
â
1.2
V IC/IB=0.5A/10mA
hFE
820 â 1800 â VCE/IC=5V/0.5A
fT
â 200 â MHz VCE=10V, IE=â50mA, f=100MHz
â
Cob
â
20
â
pF VCB=10V, IE=0A, f=1MHz
Rev.C
1/3
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