2SD2537T100V Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor (25V, 1.2A)

Medium Power Transistor (25V, 1.2A)
2SD2537
Features
1) High DC current gain.
2) High emitter-base voltage. (VEBO=12V)
3) Low saturation voltage.
(Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
12
V
Collector current
1.2
A (DC)
IC
2
A (Pulse) ^∗1
Collector power dissipation
0.5
W
PC
2
W ^∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Single pulse Pw=10ms ∗2 When mounted on a 40×40×0.7mm ceramic board.
Dimensions (Unit : mm)
2SD2537
4.5
1.6
1.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
0.4
0.5
0.4
1.5 1.5
3.0
0.4
(1) Base
(2) Collector
(3) Emitter
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SD2537
MPT3
V
DV
T100
1000
Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Measured using pulse current.
Symbol Min. Typ. Max. Unit
Conditions
BVCBO
30
−
−
V IC=10μA
BVCEO
25
−
−
V IC=1mA
BVEBO
12
−
−
V IE=10μA
ICBO
−
−
0.3 μA VCB=30V
IEBO
−
−
0.3 μA VEB=12V
VCE(sat)
−
−
0.3
V IC/IB=500mA/10mA
∗
VBE(sat)
−
−
1.2
V IC/IB=0.5A/10mA
hFE
820
− 1800 − VCE/IC=5V/0.5A
fT
− 200 − MHz VCE=10V, IE=−50mA, f=100MHz
∗
Cob
−
20
−
pF VCB=10V, IE=0A, f=1MHz
Electrical characteristics curves
2.0
Ta=25°C
2.0μA
1.8μA
1.6
1.6μA
1.4μA
1.2
1.2μA
1.0μA
0.8
0.8μA
0.6μA
0.4
0.4μA
0
0.2μA
IB=0
0
0.1
0.2
0.3 0.4
0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics( )
www.rohm.com
˓^c 2011 ROHM Co., Ltd. All rights reserved.
2.0
3.5mA_3.0mA
1.6
4.0mA
4.5mA
2.5mA
5.0mA
2.0mA
1.2
1.5mA
0.8
1.0mA
0.4
0.5mA
Ta=25°C
0
IB=0
Pulsed
0
0.1
0.2
0.3 0.4
0.5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Ground emitter output characteristics ( )
1/2
2000
VCE=5V
1000
Pulsed
500
200
100
50
20
10
5
2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.3 Ground emitter propagation characteristics
2011.05 - Rev.D