2SD2537 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (25V, 1.2A)

Transistors
2SD2537
Medium Power Transistor (25V, 1.2A)
2SD2537
zFeatures
1) High DC current gain.
2) High emitter-base voltage. (VEBO=12V)
3) Low saturation voltage.
(Max. VCE(sat)=0.3V at IC/IB=500mA/10mA)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCEO
25
V
Emitter-base voltage
VEBO
12
V
Collector current
1.2
A (DC)
IC
2
A (Pulse) ^∗1
Collector power dissipation
0.5
W
PC
2
W ^∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Single pulse Pw=100ms ∗2 When mounted on a 40×40×0.7mm ceramic board.
zExternal dimensions (Unit : mm)
2SD2537
4.0
1.0
2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ ^{Denotes hFE}
2SD2537
MPT3
VW
DV_∗
T100
1000
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗Measured using pulse current.
Symbol Min. Typ. Max. Unit
Conditions
BVCBO
30
−
−
V IC=10µA
BVCEO
25
−
−
V IC=1mA
BVEBO
12
−
−
V IE=10µA
ICBO
−
−
0.3 µA VCB=30V
IEBO
−
−
0.3 µA VEB=12V
VCE(sat)
−
−
0.3
V IC/IB=500mA/10mA
∗
VBE(sat)
−
−
1.2
V IC/IB=0.5A/10mA
hFE
820
− 2700 − VCE/IC=5V/0.5A
fT
− 200 − MHz VCE=10V, IE=−50mA, f=100MHz
∗
Cob
−
20
−
pF VCB=10V, IE=0A, f=1MHz
Rev.A
1/3