2SD2444K Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (15V, 1A)

Transistors
Power Transistor (15V, 1A)
2SD2444K
2SD2444K
zFeatures
1) Low saturation voltage, V_CE(sat) = 0.3V (Max.)
at I_C / I_B = 0.4A / 20mA.
2) I_C = 1A
3) Complements the 2SB1590K.
zPackaging specification and h_FE
Type
2SD2444K
Package
SMT3
hFE
R
Marking
BS∗
Code
T146
Basic ordering unit (pieces)
∗ Denotes hFE
3000
zExternal dimensions (Unit : mm)
SMT3
2.9
1.1
0.4
0.8
(3)
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
0.15
1.9
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
15
15
6
1
0.2
150
−55 to +150
Unit
V
V
V
A (DC)
W
°C
°C
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
Min.
15
15
6
−
−
−
180
−
−
Typ.
−
−
−
−
−
−
−
200
15
Max.
−
−
−
0.5
0.5
0.3
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=12V
VEB=5V
IC=400mA, IB=20mA
VCE/IC=2V/50mA
VCE=2V, IE= −50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
Rev.A
1/2