2SD2395 Datasheet, PDF (1/2 Pages) Rohm – For Power Amplification (50V, 3A)

Transistors
For Power Amplification (50V, 3A)
2SD2395
2SD2395
zStructure
NPN Silicon Epitaxial Planar Transistor
zFeatures
1) Low VCE (sat).
2) Wide SOA.
zApplications
Relay drive
DC-DC converter
Stabilized power supply
zExternal dimensions (Unit : mm)
TO-220FN
10.0
φ3.2
4.5
2.8
1.2
1.3
(1)Base
(2)Collector
(3)Emitter
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zComplements
PNP
2SB1566
NPN
2SD2395
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
DC
IC
Collector current
Pulse
ICP
Collector power dissipation
PC
3
A(DC)
4.5
A(Pulse)^∗1
2
W(Ta=25°C)
25 W(Tc=25°C)
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150
°C
∗1 Pw=100ms, Single pulse
zPackaging specifications and hFE
Package
Type
Code
hFE Basic ordering unit (pieces)
2SD2395 EF
Taping
−
500
hFE values are classified as follows:
Item
hFE
E
F
100 to 200 160 to 320
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗1 Pulse test
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
50
60
5
−
−
−
−
100
−
−
Typ.
−
−
−
−
−
−
−
−
100
35
Max. Unit
Conditions
− V IC=1mA
− V IC=50µA
− V IE=50µA
1.0 µA VCB=60V
1.0 µA VEB=4V
1.0 V IC/IB=2A/0.2A
∗1
1.5 V IC/IB=2A/0.2A
∗1
320 − VCE=3V, IC=0.5A
− MHz VCE=5V, IE=−0.5A, f=30MHz ^∗1
− pF VCB=10V , IE=0A , f=1MHz
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