2SD2394 Datasheet, PDF (1/2 Pages) Rohm – For Power Amplification (60V, 3A)

Transistors
For Power Amplification (60V, 3A)
2SD2394
2SD2394
zStructure
NPN Silicon Triple Diffused Planar Transistor
zFeatures
1) Low VCE (sat).
2) Excellent electrical characteristics of DC current Gain hFE.
3) Wide SOA.
zExternal dimensions (Unit : mm)
TO-220FN
10.0
φ3.2
4.5
2.8
(1)Base
(2)Collector
(3)Emitter
1.2
1.3
0.8
2.54
2.54 0.75
2.6
(1) (2) (3)
zApplications
Low frequency amplifier
zComplements
PNP
NPN
2SB1565
2SD2394
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Collector power dissipation
Junction temperature
Storage temperature
∗1 Pw=100ms, single pulse
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
80
V
60
V
7
V
3
A(DC)
6
A(Pulse)^∗1
2 W(Ta=25°C)
25 W(Tc=25°C)
150
°C
−55 to +150
°C
zPackaging specifications and hFE
Package
Type
Code
hFE Basic ordering unit (pieces)
2SD2394 EF
Taping
−
500
hFE values are classified as follows:
Item
E
F
hFE
100 to 200 160 to 320
zElectrical characteristics (Ta=25°C)
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
∗1 Pulse test
Symbol
BVCEO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min. Typ. Max. Unit
Conditions
60 − − V IC=1mA
80 − − V IC=50µA
7 − − V IE=50µA
− − 10 µA VCB=60V
−
− 10 µA VEB=7V
− − 1.0 V IC/IB=2A/0.2A
∗1
− − 1.5 V IC/IB=2A/0.2A
∗1
100 − 320 − VCE=5V, IC=0.5A
−
8
− MHz VCE=5V, IE=−0.5A, f=5MHz ^∗1
− 35 − pF VCB=10V, IE=0A, f=1MHz
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