2SD2391_09 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor (60V, 2A)

Medium Power Transistor (60V, 2A)
2SD2391
Features
1) Low saturation voltage , typically
VCE (sat) =0.13V at IC / IB =1A /50mA.
2) Collector-emitter voltage =60V
3) Pc = 2W (on 40400.7mm ceramic board).
4) Complements the 2SB1561.
Dimensions (Unit : mm)
MPT3
4.5
1.6
1.5
(1)
(2)
(3)
0.4
0.4
0.5
0.4
(1)Base
1.5 1.5
3.0
(2)Collector
(3)Emitter
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60
60
6
2
6
0.5
2
150
−55 to +150
∗1 Single pulse, Pw=10ms
∗2 When mounted on a 40⁺ 40⁺ 0.7mm ceramic board.
Unit
V
V
V
A
A ^∗1
W
∗2
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE1
hFE2
fT
Cob
Min.
Typ.
Max.
Unit
Conditions
60
−
−
V
IC=50μA
60
−
−
V
IC=1mA
6
−
−
V
IE=50μA
−
−
0.1
μA VCB=50V
−
−
0.1
μA VEB=5V
−
0.13
0.35
V
IC/IB=1A/50mA
∗
120
−
270
−
VCE/IC=−2V/−0.5A
45
−
−
−
VCE/IC=−2V/−1.5A
−
210
−
MHz VCE=2V, IE=−0.5A, f=100MHz
∗
−
21
−
pF VCB=10V, IE=0A, f=1MHz
Packaging specifications and hFE
Type
2SD2391
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗Denotes hFE
MPT3
Q
DT∗
T100
1000
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2009.12 - Rev.A