2SD2318_10 Datasheet, PDF (1/3 Pages) Rohm – High-current gain Power Transistor (60V, 3A)

High-current gain Power Transistor (60V, 3A)
2SD2318
Features
1) High DC current gain.
2) Low saturation voltage.
(Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗ Single pulse PW=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
80
60
6
3
4.5
1
15
150
−55 to +150
Unit
V
V
V
A
A(Pulse) ∗
W
W(TC=25°C)
°C
°C
Packaging specifications and hFE
Type
Package
hFE
Code
Basic ordering unit (pieces)
2SD2318
CPT3
UV
TL
2500
Dimensions (Unit : mm)
5.5 1.5
0.9
C0.5
0.8Min.
1.5
2.5
9.5
ROHM : CPT3
EIAJ : SC-63
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
80
−
−
V IC=50μA
Collector-emitter breakdown voltage BVCEO
60
−
−
V IC=1mA
Emitter-base breakdown voltage
BVEBO
6
−
−
V IE=50μA
Collector cutoff current
ICBO
−
−
100
μA VCB=80V
Emitter cutoff current
IEBO
−
−
100
μA VEB=6V
Collector-emitter saturation voltage
VCE(sat)
−
−
1.0
V IC/IB=2A/0.05A
∗
Base-emitter saturation voltage
VBE(sat)
−
−
1.5
V IC/IB=2A/0.05A
∗
DC current transfer ratio
hFE
560
−
1800
− VCE/IC=4V/0.5A
Transition frequency
fT
−
50
−
MHz VCE=5V, IE=−0.2A, f=10MHz
Output capacitance
Cob
−
60
−
pF VCB=10V, IE=0A, f=1MHz
∗
∗Measured using pulse current.
(1) Base
(2) Collector
(3) Emitter
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2010.01 - Rev.B