2SD2264 Datasheet, PDF (1/4 Pages) Rohm – Low Frequency Transistor (20V,3A)

Transistors
2SD2264
Low Frequency Transistor (20V, 3A)
2SD2264
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
（IC / IB = 2A / 0.1A）
2) Excellent current gain characteristics.
zExternal dimensions (Unit : mm)
2SD2264
6.8±0.2
2.5±0.2
zStructure
Epitaxial planar type
NPN silicon transistor
0.65Max.
0.5±0.1
(1) (2) (3)
2.54 2.54
1.05
0.45±0.1
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
∗ Denotes hFE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
6
V
Collector current
3
A (DC)
IC
5
A (Pulse) ∗1
Collector power dissipation
PC
1
W _∗2
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Single pulse Pw=10ms
∗2 Printed circuit board, 1.7mm thick, collector copper plating 100mm² or larger.
Rev.A
1/3