2SD2195 Datasheet, PDF (1/4 Pages) Rohm – Power Transistor (100V , 2A)

Transistors
2SD2195 / 2SD1980 / 2SD1867
Power Transistor (100V, 2A)
2SD2195 / 2SD1980 / 2SD1867
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1580 / 2SB1316.
zEquivalent circuit
C
B
R1
R2
E
R1 3.5kΩ
R2 300Ω
B : Base
C : Collector
E : Emitter
zExternal dimensions (Unit : mm)
2SD2195
4.5
1.6
1.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
0.4
0.5
0.4
1.5 1.5
3.0
2SD1980
6.5
5.1
0.4
(1) Base
(2) Collector
(3) Emitter
2.3
0.5
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
100
Collector-emitter voltage
VCEO
100
Emitter-base voltage
VEBO
6
Collector current
IC
2
3 ^∗1
2SD2195
Collector
power
PC
dissipation
2SD1980
0.5
2 ^∗2
1
10
2SD1867
1 ∗3
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw=100ms
∗2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
∗3 Printed circuit board, 1.7mm thick, collector plating 100mm² or larger.
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25°C)
W
°C
°C
0.75
0.9 2.3
(1)
(2)
0.65
(3) 2.3
ROHM : CPT3
EIAJ : SC-63
2SD1867
6.8
0.5
1.0
(1) Base
(2) Collector
(3) Emitter
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
Rev.B
1/3