2SD2167 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (31+/-4V, 2A)

Transistors
Power Transistor (31±4V, 2A)
2SD2167
2SD2167
zFeatures
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due
to low loads.
4) PC=2 W (on 40×40×0.7mm ceramic board)
zExternal dimensions (Unit : mm)
ROHM : MPT3
EIAJ : SC-62
4.0
1.0
2.5 0.5
(1)
(2)
(3)
(1) Base
(2) Collector
(3) Emitter
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
31±4
31±4
Emitter-base voltage
Collector current
VEBO
5
2
IC
3
0.5
Collector power dissipation
PC
2
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗ 1 Pw=20ms , duty=1 / 2
∗ ^{2 When mounted on a 40 × 40 × 0.7 mm ceramic board.}
Unit
V
V
V
A(DC)
A(Pulse) ∗ 1
W
W ∗2
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SD2167
MPT3
NPQ
DL∗
T100
1000
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
27
−
35
V
IC = 50µA
Collector-emitter breakdown voltage BVCEO
27
−
35
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE = 50µA
Collector cutoff current
ICBO
−
−
1
µA VCB = 20V
Emitter cutoff current
IEBO
−
−
1
µA VEB = 5V
−
−
1
V
IC/IB = 2A/0.2A
∗
Collector-emitter saturation voltage
VCE(sat)
−
0.25
0.5
V
IC/IB = 1A/50mA
∗
DC current transfer ratio
hFE
56
−
270
−
VCE/IC = 3V/0.5A
Transition frequency
fT
−
100
−
MHz VCE = 3V , IE = −0.5A , f= 30MHz
∗
Output capacitance
Cob
−
25
−
pF VCB = 10V , IE = 0A , f = 1MHz
∗ Measured using pulse current.
Rev.A
1/2