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2SD2153_09 Datasheet, PDF (1/3 Pages) Rohm – High gain amplifier transistor (25V, 2A) | |||
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High gain amplifier transistor (25V, 2A)
2SD2153
ï¬Features
1) Low saturation voltage,
typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA
2) Excellent DC current gain characteristics.
ï¬Dimensions (Unit : mm)
4.0
1.0
2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
ï¬Absolute maximum ratings (Ta=25ï°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
30
VCEO
25
VEBO
6
2
IC
3
Collector power dissipation
0.5
PC
2 â2
Junction temperature
Storage temperature
Tj
150
Tstg
â55 to +150
â1 Single pulse, Pw=10ms
â2 Mounted on a 40+ 40+ t0.7mm Ceramic substrate
Unit
V
V
V
A(DC)
A(Pulse) â1
W
°C
°C
ï¬Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
â Denotes hFE
2SD2153
MPT3
UVW
DN â
T100
1000
ï¬Electrical characteristics (Ta=25ï°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
BVCBO
30
â
â
V
IC = 50μA
Collector-emitter breakdown voltage
BVCEO
25
â
â
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
6
â
â
V
IE = 50μA
Collector cutoff current
ICBO
â
â
0.5
μA VCB = 20V
Emitter cutoff current
IEBO
â
â
0.5
μA VEB = 5V
Collector-emitter saturation voltage
VCE(sat)
â
0.12
0.5
V
IC/IB = 1A/20mA
â
DC current transfer ratio
hFE
820
â
1800
â
VCE/IC = 6V/0.5A
Transition frequency
fT
â
110
â
MHz VCE = 10V , IE = â10mA , f= 100MHz
Output capacitance
Cob
â
22
â
pF VCB = 10V , IE = 0A , f = 1MHz
â Measured using pulse current.
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.12 - Rev.B
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