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2SD2153 Datasheet, PDF (1/3 Pages) Rohm – High gain amplifier transistor (25V, 2A) | |||
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Transistors
2SD2153
High gain amplifier transistor (25V, 2A)
2SD2153
zFeatures
1) Low saturation voltage,
typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA
2) Excellent DC current gain characteristics.
zExternal dimensions (Unit : mm)
4.0
1.0
2.5 0.5
(1)
(2)
(3)
ROHM : MPT3
EIAJ : SC-62
(1) Base
(2) Collector
(3) Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
30
Collector-emitter voltage
VCEO
25
Emitter-base voltage
VEBO
6
Collector current
2
IC
3
Collector power dissipation
0.5
PC
2 â2
Junction temperature
Tj
150
Storage temperature
Tstg
â55 to +150
â1 Single pulse, Pw=10ms
â2 Mounted on a 40 40 t0.7mm Ceramic substrate
Unit
V
V
V
A(DC)
A(Pulse) â1
W
°C
°C
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
â Denotes hFE
2SD2153
MPT3
UVW
DN â
T100
1000
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
BVCBO
30
â
â
V
IC = 50µA
Collector-emitter breakdown voltage
BVCEO
25
â
â
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
6
â
â
V
IE = 50µA
Collector cutoff current
ICBO
â
â
0.5
µA VCB = 20V
Emitter cutoff current
IEBO
â
â
0.5
µA VEB = 5V
Collector-emitter saturation voltage
VCE(sat)
â
0.12
0.5
V
IC/IB = 1A/20mA
â
DC current transfer ratio
hFE
560
â
2700
â
VCE/IC = 6V/0.5A
Transition frequency
fT
â
110
â
MHz VCE = 10V , IE = â10mA , f= 100MHz
Output capacitance
Cob
â
22
â
pF VCB = 10V , IE = 0A , f = 1MHz
â Measured using pulse current.
Rev.A
1/2
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