2SD2150T100S Datasheet, PDF (1/3 Pages) Rohm – Low Frequency Transistor (20V, 3A)

Low Frequency Transistor (20V, 3A)
2SD2150
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
（IC / IB = 2A / 0.1A）
2) Excellent current gain characteristics.
3) Complements the 2SB1424.
zStructure
Epitaxial planar type
NPN silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
3
IC
5
0.5
Collector power dissipation
PC
2
Junction temperature
Tj
150
Storage temperature
Tstg
∗1 Single pulse Pw=10ms
∗2 Mounted on a 40×40×0.7mm Ceramic substrate.
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse) _∗1
W
W _∗2
°C
°C
zDimensions(Unit : mm)
2SD2150
4.5^{+−00..21}
1.6±0.1
1.5_{−+00..12}
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4_{−+00..015}
(1) Base
ROHM : MPT3
(2) Collector
EIAJ : SC-62
(3) Emitter
∗ Abbreviated symbol: CF
∗ Denotes hFE
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO 40
Collector-emitter breakdown voltage BVCEO 20
Emitter-base breakdown voltage
BVEBO
6
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage
VCE(sat)
−
DC current transfer ratio
hFE
120
Transition frequency
fT
−
Output capacitance
Cob
−
∗ Measured using pulse current.
Typ.
−
−
−
−
−
0.2
−
290
25
Max.
−
−
−
0.1
0.1
0.5
560
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=30V
VEB=5V
IC/IB=2A/0.1A
∗
VCE=2V, IC=0.1A
VCE=2V, IE= −0.5A, f=100MHz
VCE=10V, IE=0A, f=1MHz
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2009.11 - Rev.B