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2SD2150T100R Datasheet, PDF (1/3 Pages) Rohm – Low Frequency Transistor (20V, 3A) | |||
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Low Frequency Transistor (20V, 3A)
2SD2150
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
ï¼IC / IB = 2A / 0.1Aï¼
2) Excellent current gain characteristics.
3) Complements the 2SB1424.
zStructure
Epitaxial planar type
NPN silicon transistor
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
40
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
3
IC
5
0.5
Collector power dissipation
PC
2
Junction temperature
Tj
150
Storage temperature
Tstg
â1 Single pulse Pw=10ms
â2 Mounted on a 40Ã40Ã0.7mm Ceramic substrate.
â55 to +150
Unit
V
V
V
A (DC)
A (Pulse) â1
W
W â2
°C
°C
zDimensions(Unit : mm)
2SD2150
4.5+â00..21
1.6±0.1
1.5â+00..12
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4â+00..015
(1) Base
ROHM : MPT3
(2) Collector
EIAJ : SC-62
(3) Emitter
â Abbreviated symbol: CF
â Denotes hFE
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO 40
Collector-emitter breakdown voltage BVCEO 20
Emitter-base breakdown voltage
BVEBO
6
Collector cutoff current
ICBO
â
Emitter cutoff current
IEBO
â
Collector-emitter saturation voltage
VCE(sat)
â
DC current transfer ratio
hFE
120
Transition frequency
fT
â
Output capacitance
Cob
â
â Measured using pulse current.
Typ.
â
â
â
â
â
0.2
â
290
25
Max.
â
â
â
0.1
0.1
0.5
560
â
â
Unit
V
V
V
µA
µA
V
â
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=30V
VEB=5V
IC/IB=2A/0.1A
â
VCE=2V, IC=0.1A
VCE=2V, IE= â0.5A, f=100MHz
VCE=10V, IE=0A, f=1MHz
www.rohm.com
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âc 2009 ROHM Co., Ltd. All rights reserved.
2009.11 - Rev.B
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