2SD2150 Datasheet, PDF (1/4 Pages) Rohm – Low Frequency Transistor(20V, 3A)

Transistors
2SD2150
Low Frequency Transistor (20V, 3A)
2SD2150
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.2V(Typ.)
（IC / IB = 2A / 0.1A）
2) Excellent current gain characteristics.
3) Complements the 2SB1424.
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Unit : mm)
2SD2150
4.5^{+−00..21}
1.6±0.1
1.5_{−+00..12}
(1) (2) (3)
0.4±0.1
1.5±0.1
0.5±0.1
3.0±0.2
0.4±0.1
1.5±0.1
0.4_{−+00..015}
(1) Base
ROHM : MPT3
(2) Collector
EIAJ : SC-62
(3) Emitter
∗ Abbreviated symbol: CF
∗ Denotes hFE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
Collector current
IC
Collector power dissipation
PC
Junction temperature
Tj
Storage temperature
Tstg
∗1 Single pulse Pw=10ms
∗2 Mounted on a 40×40×0.7mm Ceramic substrate.
Limits
40
20
6
3
5
0.5
2
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse) ∗1
W
W _∗2
°C
°C
Rev.A
1/3