2SD2143_12 Datasheet, PDF (1/3 Pages) Rohm – Medium Power Transistor

Medium Power Transistor
(Motor, Relay drive) (6010V, 2A)
2SD2143
Features
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 Single pulse Pw=100ms
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
60±10
60±10
6
2
3 ^∗1
1
10
150
−55 to +150
Unit
V
V
V
A (DC)
A (Pulse)
W
W (Tc=25°C)
°C
°C
Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
2SD2143
CPT3
1k to 10k
−
TL
2500
Inner circuit
C
 Dimensions (Unit : mm)
5.5
1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
B
R1
R2
E : Emitter
B : Base
C : Collector
E
R1 3.5kΩ
R2 300Ω
Electrical characteristics (Ta=25C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
BVCEO
50
−
70
V IC=50μA
50
−
70
V IC=5mA
Collector cutoff current
ICBO
−
−
1.0
μA VCB=40V
Emitter cutoff current
IEBO
−
−
3
mA VEB=5V
Collector-emitter saturation voltage
VCE(sat)
−
−
1.5
V IC/IB=1A/1mA
∗
DC current transfer ratio
hFE
1000
−
10000
−
VCE=2V, IC=1A
Transition frequency
fT
−
80
−
MHz VCE=5V, IE= −0.1A, f=30MHz
Output capacitance
Cob
−
25
−
pF VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current.
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2012.01 - Rev.C