2SD2143_09 Datasheet, PDF (1/4 Pages) Rohm – Medium Power Transistor (Motor, Relay drive) (60±10V, 2A)

Medium Power Transistor
(Motor, Relay drive) (60±10V, 2A)
2SD2143 / 2SD1866
zFeatures
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
VCBO
VCEO
60±10
60±10
Emitter-base voltage
VEBO
6
Collector current
2
IC
3 ^∗1
Collector power ^2SD2143
dissipation
2SD1866
PC
1
10
1 ^∗2
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw=100ms
∗2 Printed circuit board 1.7mm thick, collector plating 1cm² or larger.
Unit
V
V
V
A (DC)
A (Pulse)
W
W (Tc=25°C)
W
°C
°C
zPackaging specifications and hFE
Type
2SD2143
Package
hFE
Marking
Code
Basic ordering unit (pieces)
CPT3
1k to 10k
−
TL
2500
2SD1866
ATV
1k to 10k
−
TV2
2500
zInner circuit
C
z Dimensions (Unit : mm)
2SD2143
5.5
1.5
0.9
0.8Min.
ROHM : CPT3
EIAJ : SC-63
1.5
2.5
9.5
C0.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SD1866
6.8
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
B
R1
R2
E : Emitter
B : Base
C : Collector
E
R1 3.5kΩ
R2 300Ω
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
50
−
70
V IC=50µA
Collector-emitter breakdown voltage
BVCEO
50
−
70
V IC=5mA
Collector cutoff current
ICBO
−
−
1.0
µA VCB=40V
Emitter cutoff current
IEBO
−
−
3
mA VEB=5V
Collector-emitter saturation voltage
VCE(sat)
−
−
1.5
V IC/IB=1A/1mA
∗
DC current transfer ratio
hFE
1000
−
10000
−
VCE=2V, IC=1A
Transition frequency
fT
−
80
−
MHz VCE=5V, IE= −0.1A, f=30MHz
Output capacitance
Cob
−
25
−
pF VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current.
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2009.11 - Rev.B