2SD2142K_1 Datasheet, PDF (1/3 Pages) Rohm – High-gain Amplifier Transistor (30V, 0.3A)

Transistors
2SD2142K
High-gain Amplifier Transistor (30V, 0.3A)
2SD2142K
zFeatures
1) Darlington connection for a high hFE.
(DC current gain = 5000 (Min.) at VCE = 3V, IC = 10mA)
2) High input impedance.
zInner circuit
C
B
E : Emitter
C : Collector
E
B : Base
zDimensions (Unit : mm)
SMT3
2.9
1.1
0.4
0.8
(3)
(1)Emitter
(2)Base
(3)Collector
(2)
(1)
0.95 0.95
0.15
1.9
Each lead has same dimensions
zAbsolute maximum ratings (Ta=25_°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
30
V
Collector-emitter voltage
VCER
30
V
Emitter-base voltage
VEBO
10
V
Collector current
IC
0.3
A
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
zElectrical characteristics (Ta=25_°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
30
−
−
V
IC=10µA
BVCES
30
−
−
V
IC=100mA
Emitter-base breakdown voltage
BVEBO
10
−
−
V
IE=10µA
Collector cutoff current
ICBO
−
−
0.1
µA VCB=30V
Emitter cutoff current
IEBO
−
−
0.1
µA VEB=10V
DC current transfer ratio
Collector-emitter saturation voltage
hFE1
5000
−
−
−
VCE/IC=5V/10mA
hFE2
10000
−
−
−
VCE/IC=5V/100mA
VCE(sat)
−
−
1.5
V
IC/IB=100mA/0.1mA
Base-emitter voltage
VBE(on)
−
−
2
V
VCE/IC=5V/100mA
Transition frequency
fT
−
200
−
MHz VCE=5V , IE=−10mA , f=100MHz
∗
Output capacitance
Cob
−
5.4
−
pF VCB=10V , IE=0A , f=1MHz
∗ Transition frequency of the device.
zPackaging specifications and hFE
Type
2SD2142K
Package
hFE
SMT3
5k~
Code
Basic ordering unit (pieces)
T146
3000
Rev.B
1/2