2SD2118_09 Datasheet, PDF (1/4 Pages) Rohm – Low VCE(sat) transistor (strobe flash)

Low V_CE(sat) transistor (strobe flash)
2SD2118
zFeatures
1) Low VCE(sat).
VCE(sat) = 0.25V (Typ.)
(IC/IB = 4A / 0.1A)
2) Excellent DC current gain characteristics.
3) Complements the 2SB1412.
zDimensions (Unit : mm)
2SD2118
zStructure
Epitaxial planar type
NPN silicon transistor
ROHM : CPT3
EIAJ : SC-63
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
50
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
6
Collector current
IC
5
ICP
10
Collector power
1
dissipation
2SD2118
PC
10
Junction temperature
Tj
150
Storage temperature
Tstg
−55 to +150
∗1 Single pulse Pw=10ms
Unit
V
V
V
A(DC)
A(Pulse) ^∗1
W
W(Tc=25°C)
°C
°C
∗ Denotes hFE
(1) Base
(2) Collector
(3) Emitter
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
50
20
6
−
−
−
120
−
−
Typ.
−
−
−
−
−
0.3
−
150
35
Max.
−
−
−
0.5
0.5
1.0
390
−
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Conditions
IC=50µA
IC=1mA
IE=50µA
VCB=40V
VEB=5V
IC/IB=4A/0.1A
∗
VCE=2V, IC=0.5A
∗
VCE=6V, IE=−50mA, f=100MHz
VCE=20V, IE=0A, f=1MHz
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2009.11 - Rev.C