2SD2114KT146W Datasheet, PDF (1/4 Pages) Rohm – High-current Gain Medium Power Transistor (20V, 0.5A)

High-current Gain Medium Power Transistor (20V, 0.5A)
2SD2114K
Features
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
Structure
Epitaxial planar type
NPN silicon transistor
Dimensions (Unit : mm)
2SD2114K
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1^{+−00..21}
0.8±0.1
0∼0.1
ROHM : SMT3
EIAJ : SC-59
(3)
0.4
+0.1
−0.05
0.15_{−+00..016}
All terminals have same dimensions
∗ Abbreviated symbol: BB
∗ Denotes hFE
(1) Emitter
(2) Base
(3) Collector
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
25
Collector-emitter voltage
VCEO
20
Emitter-base voltage
VEBO
12
Collector current
0.5
IC
1
Collector power dissipation
PC
0.2
Junction temperature
Tj
150
Storage temperature
∗ Single pulse Pw=100ms
Tstg
−55 to +150
Unit
V
V
V
A(DC)
A(Pulse) _∗
W
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Collector-base breakdown voltage
BVCBO 25
Collector-emitter breakdown voltage BVCEO 20
Emitter-base breakdown voltage
BVEBO 12
Collector cutoff current
ICBO
−
Emitter cutoff current
IEBO
−
Collector-emitter saturation voltage
VCE(sat)
−
DC current transfer ratio
Transition frequency
Output capacitance
hFE
820
fT^∗
−
Cob
−
Output On-resistance
∗ Measured using pulse current
Ron
−
Typ.
−
−
−
−
−
0.18
−
350
8.0
0.8
Max.
−
−
−
0.5
0.5
0.4
2700
−
−
−
Unit
V
V
V
μA
μA
V
−
MHz
pF
Ω
Conditions
IC=10μA
IC=1mA
IE=10μA
VCB=20V
VEB=10V
IC/IB=500mA/20mA
VCE=3V, IC=10mA
VCE=10V, IE= −50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
IB=1mA, Vi=100mV(rms), f=1kHz
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2012.01 - Rev.C