2SD2114KS Datasheet, PDF (1/5 Pages) Rohm – High-current Gain Medium Power Transistor (20V, 0.5A)

Transistors
2SD2114K / 2SD2144S
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
zFeatures
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO =12V (Min.)
3) Low VCE (sat).
VCE (sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
zStructure
Epitaxial planar type
NPN silicon transistor
zExternal dimensions (Unit : mm)
2SD2114K
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1^{+−00..21}
0.8±0.1
0∼0.1
ROHM : SMT3
EIAJ : SC-59
(3)
0.4
+0.1
−0.05
0.15_{−+00..016}
All terminals have same dimensions
∗ Abbreviated symbol: BB
(1) Emitter
(2) Base
(3) Collector
2SD2144S
4±0.2
2±0.2
ROHM : SPT
EIAJ : SC-72
∗ Denotes hFE
0.45^{+−00..1055}
2.5^{+−00..41}
5
(1) (2) (3)
0.5
0.45
+0.15
−0.05
(1) Emitter
(2) Collector
(3) Base
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector power ^2SD2114K
dissipation
2SD2144S
Junction temperature
Storage temperature
∗ Single pulse Pw=100ms
PC
Tj
Tstg
Limits
25
20
12
0.5
1
0.2
0.3
150
−55 to +150
Unit
V
V
V
A(DC)
A(Pulse) _∗
W
°C
°C
Rev.B
1/4