2SD2114K Datasheet, PDF (1/4 Pages) Rohm – High-current Gain MediumPower Transistor (20V, 0.5A)

Transistors
High-current Gain Medium
Power Transistor (20V, 0.5A)
2SD2114K / 2SD2144S
FFeatures
1) High DC current gain.
hFE = 1200 (Typ.)
2) High emitter-base voltage.
VEBO = 12V (Min.)
3) Low VCE(sat).
VCE(sat) = 0.18V (Typ.)
(IC / IB = 500mA / 20mA)
FStructure
Epitaxial planar type
NPN silicon transistor
FExternal dimensions (Units: mm)
232
(96-232-C107)