2SD1980_12 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor

Power Transistor (100V, 2A)
2SD1980
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1316.
inner circuit
C
B
R1
R2
E
R1 3.5kΩ
R2 300Ω
B : Base
C : Collector
E : Emitter
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
VCBO
VCEO
VEBO
IC
PC
100
100
6
2
3 ^∗1
1
10
Junction temperature
Storage temperature
∗1 Single pulse Pw=100ms
Tj
150
Tstg
−55 to +150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25°C)
°C
°C
Packaging specifications and hFE
Type
2SD1980
Package
hFE
Marking
CPT3
1k to 10k
−
Code
TL
Basic ordering unit (pieces)
∗ Denotes hFE
2500
Dimensions (Unit : mm)
2SD1980
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1)
(2)
0.65
(3) 2.3
ROHM : CPT3
EIAJ : SC-63
0.5
1.0
(1) Base
(2) Collector
(3) Emitter
Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltag
Base-Emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
Symbol
BVCBO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
100
100
6
−
−
−
−
1000
−
−
Typ.
−
−
−
−
−
−
−
−
80
25
Max.
−
−
−
10
3
1.5
2.0
10000
−
−
Unit
V
V
V
μA
mA
V
V
−
MHz
pF
Conditions
IC = 50μA
IC = 5mA
IE = 5mA
VCB = 100V
VEB = 5V
IC = 1A , IB = 1mA
∗
IC/IB = 1A/1mA
VCE = 2V , IC = 1A
∗
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
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2012.01 - Rev.D