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2SD1980_09 Datasheet, PDF (1/3 Pages) Rohm – Power Transistor (100V, 2A)
Power Transistor (100V, 2A)
2SD1980 / 2SD1867
zFeatures
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1316.
zinner circuit
C
B
R1
R2
E
R1 3.5kΩ
R2 300Ω
B : Base
C : Collector
E : Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
Collector
power
2SD1980
PC
dissipation
2SD1867
2
3 ∗1
1
10
1 ∗2
A(DC)
A(Pulse)
W
W(Tc=25°C)
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Single pulse Pw=100ms
∗2 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.
zPackaging specifications and hFE
Type
2SD1980
2SD1867
Package
CPT3
ATV
hFE
1k to 10k
1k to 10k
Marking
−
−
Code
TL
TV2
Basic ordering unit (pieces) 2500
2500
∗ Denotes hFE
zDimensions (Unit : mm)
2SD1980
6.5
5.1
2.3
0.5
0.75
0.9 2.3
(1)
(2)
0.65
(3) 2.3
ROHM : CPT3
EIAJ : SC-63
2SD1867
6.8
0.5
1.0
(1) Base
(2) Collector
(3) Emitter
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
ROHM : ATV
1.05
0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltag
Base-Emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
∗ Measured using pulse current.
Symbol
BVCBO
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
fT
Cob
Min.
100
100
6
−
−
−
−
1000
−
−
Typ.
−
−
−
−
−
−
−
−
80
25
Max.
−
−
−
10
3
1.5
2.0
10000
−
−
Unit
V
V
V
µA
mA
V
V
−
MHz
pF
Conditions
IC = 50µA
IC = 5mA
IE = 5mA
VCB = 100V
VEB = 5V
IC = 1A , IB = 1mA
∗
IC/IB = 1A/1mA
VCE = 2V , IC = 1A
∗
VCE = 5V , IE = −0.1A , f = 30MHz
VCB = 10V , IE = 0A , f = 1MHz
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2009.12 - Rev.C